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| Datasheet | IXFH60N65X2 |
| File Size | 150.65 KB |
| Total Pages | 5 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXFH60N65X2 |
| Description | MOSFET N-CH 650V 60A TO-247 |
IXFH60N65X2 - IXYS
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IXFH60N65X2 | IXYS | MOSFET N-CH 650V 60A TO-247 | 715 More on Order |
URL Link
www.oemstron.com/datasheet/IXFH60N65X2
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Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 52mOhm @ 30A, 10V Vgs(th) (Max) @ Id 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6180pF @ 25V FET Feature - Power Dissipation (Max) 780W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package - Package / Case TO-247-3 |