Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IXFH10N100P |
| File Size | 178.1 KB |
| Total Pages | 4 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXFH10N100P |
| Description | MOSFET N-CH 1KV 10A TO-247AD |
IXFH10N100P - IXYS
The Products You May Be Interested In
 |
IXFH10N100P | IXYS | MOSFET N-CH 1KV 10A TO-247AD | 159 More on Order |
URL Link
www.oemstron.com/datasheet/IXFH10N100P
|
Manufacturer IXYS Series HiPerFET™, PolarP2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.4Ohm @ 5A, 10V Vgs(th) (Max) @ Id 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3030pF @ 25V FET Feature - Power Dissipation (Max) 380W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AD (IXFH) Package / Case TO-247-3 |