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IXFC16N80P Datasheet

IXFC16N80P Cover
DatasheetIXFC16N80P
File Size202.05 KB
Total Pages2
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFC16N80P
Description MOSFET N-CH 800V 9A ISOPLUS220

IXFC16N80P - IXYS

IXFC16N80P Datasheet Page 1
IXFC16N80P Datasheet Page 2

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IXFC16N80P IXFC16N80P IXYS MOSFET N-CH 800V 9A ISOPLUS220 474

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URL Link

IXFC16N80P

IXYS

Manufacturer

IXYS

Series

HiPerFET™, PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

650mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

71nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4600pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS220™

Package / Case

ISOPLUS220™