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| Datasheet | IXFB40N110P |
| File Size | 120.33 KB |
| Total Pages | 4 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXFB40N110P |
| Description | MOSFET N-CH 1100V 40A PLUS264 |
IXFB40N110P - IXYS
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IXFB40N110P | IXYS | MOSFET N-CH 1100V 40A PLUS264 | 161 More on Order |
URL Link
www.oemstron.com/datasheet/IXFB40N110P
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Manufacturer IXYS Series HiPerFET™, PolarP2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1100V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 260mOhm @ 20A, 10V Vgs(th) (Max) @ Id 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 310nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 19000pF @ 25V FET Feature - Power Dissipation (Max) 1250W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS264™ Package / Case TO-264-3, TO-264AA |