Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

IXFB210N30P3 Datasheet

IXFB210N30P3 Cover
DatasheetIXFB210N30P3
File Size135.92 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFB210N30P3
Description MOSFET N-CH 300V 210A PLUS264

IXFB210N30P3 - IXYS

IXFB210N30P3 Datasheet Page 1
IXFB210N30P3 Datasheet Page 2
IXFB210N30P3 Datasheet Page 3
IXFB210N30P3 Datasheet Page 4
IXFB210N30P3 Datasheet Page 5

The Products You May Be Interested In

IXFB210N30P3 IXFB210N30P3 IXYS MOSFET N-CH 300V 210A PLUS264 307

More on Order

URL Link

Manufacturer

IXYS

Series

HiPerFET™, Polar3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

210A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14.5mOhm @ 105A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

268nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

16200pF @ 25V

FET Feature

-

Power Dissipation (Max)

1890W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PLUS264™

Package / Case

TO-264-3, TO-264AA