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IXFA34N65X2 Datasheet

IXFA34N65X2 Cover
DatasheetIXFA34N65X2
File Size204.45 KB
Total Pages6
ManufacturerIXYS
Website
Total PartsThis datasheet covers 3 part numbers
Associated Parts IXFA34N65X2, IXFH34N65X2, IXFP34N65X2
Description MOSFET N-CH 650V 34A TO-263, MOSFET N-CH 650V 34A TO-247, MOSFET N-CH 650V 34A TO-220

IXFA34N65X2 - IXYS

IXFA34N65X2 Datasheet Page 1
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IXFA34N65X2 IXFA34N65X2 IXYS MOSFET N-CH 650V 34A TO-263 224

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IXFH34N65X2 IXFH34N65X2 IXYS MOSFET N-CH 650V 34A TO-247 310

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IXFP34N65X2 IXFP34N65X2 IXYS MOSFET N-CH 650V 34A TO-220 412

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URL Link

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

105mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

5.5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3330pF @ 25V

FET Feature

-

Power Dissipation (Max)

540W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263AA

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

105mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

5.5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3330pF @ 25V

FET Feature

-

Power Dissipation (Max)

540W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

105mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

5.5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3330pF @ 25V

FET Feature

-

Power Dissipation (Max)

540W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3