Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IX4424G |
| File Size | 11,705.98 KB |
| Total Pages | 20 |
| Manufacturer | IXYS Integrated Circuits Division |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IX4424G, IXFJ80N25X3 |
| Description | 3A DUAL NON-INVERTING LOW SIDE G, MOSFET N-CH 250V 44A TO247 |
IX4424G - IXYS Integrated Circuits Division
The Products You May Be Interested In
 |
IX4424G | IXYS Integrated Circuits Division | 3A DUAL NON-INVERTING LOW SIDE G | 490 More on Order |
 |
IXFJ80N25X3 | IXYS | MOSFET N-CH 250V 44A TO247 | 240 More on Order |
URL Link
|
Manufacturer IXYS Integrated Circuits Division Series - Driven Configuration Low-Side Channel Type Independent Number of Drivers 2 Gate Type IGBT Voltage - Supply 4.5V ~ 35V Logic Voltage - VIL, VIH 0.8V, 3V Current - Peak Output (Source, Sink) 3A, 3A Input Type CMOS/TTL High Side Voltage - Max (Bootstrap) - Rise / Fall Time (Typ) 18ns, 18ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case 8-DIP (0.300", 7.62mm) Supplier Device Package 8-DIP |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 44A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 18mOhm @ 40A, 10V Vgs(th) (Max) @ Id 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs 83nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5430pF @ 25V FET Feature - Power Dissipation (Max) 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISO TO-247-3 Package / Case TO-247-3 |