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IRLMS5703TR Datasheet

IRLMS5703TR Cover
DatasheetIRLMS5703TR
File Size276.43 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IRLMS5703TR
Description MOSFET P-CH 30V 2.3A 6-TSOP

IRLMS5703TR - Infineon Technologies

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IRLMS5703TR IRLMS5703TR Infineon Technologies MOSFET P-CH 30V 2.3A 6-TSOP 275

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URL Link

IRLMS5703TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

200mOhm @ 1.6A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

170pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.7W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Micro6™(SOT23-6)

Package / Case

SOT-23-6