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| Datasheet | IRL3502STRR |
| File Size | 134.07 KB |
| Total Pages | 9 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IRL3502STRR, IRL3502S |
| Description | MOSFET N-CH 20V 110A D2PAK, MOSFET N-CH 20V 110A D2PAK |
IRL3502STRR - Infineon Technologies
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V Rds On (Max) @ Id, Vgs 7mOhm @ 64A, 7V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 110nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 15V FET Feature - Power Dissipation (Max) 140W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V Rds On (Max) @ Id, Vgs 7mOhm @ 64A, 7V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 110nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 15V FET Feature - Power Dissipation (Max) 140W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |