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| Datasheet | IRFW630BTM-FP001 |
| File Size | 729.85 KB |
| Total Pages | 8 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IRFW630BTM-FP001 |
| Description | MOSFET N-CH 200V 9A D2PAK |
IRFW630BTM-FP001 - ON Semiconductor
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IRFW630BTM-FP001 | ON Semiconductor | MOSFET N-CH 200V 9A D2PAK | 116 More on Order |
URL Link
www.oemstron.com/datasheet/IRFW630BTM-FP001
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 720pF @ 25V FET Feature - Power Dissipation (Max) 3.13W (Ta), 72W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |