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| Datasheet | IRFSL59N10D |
| File Size | 136.37 KB |
| Total Pages | 12 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IRFSL59N10D |
| Description | MOSFET N-CH 100V 59A TO-262 |
IRFSL59N10D - Infineon Technologies
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URL Link
www.oemstron.com/datasheet/IRFSL59N10D
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 59A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 25mOhm @ 35.4A, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2450pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 200W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |