Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

IRFSL41N15D Datasheet

IRFSL41N15D Cover
DatasheetIRFSL41N15D
File Size262.5 KB
Total Pages13
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 3 part numbers
Associated Parts IRFSL41N15D, IRFS41N15DTRR, IRFB41N15D
Description MOSFET N-CH 150V 41A TO-262, MOSFET N-CH 150V 41A D2PAK, MOSFET N-CH 150V 41A TO-220AB

IRFSL41N15D - Infineon Technologies

IRFSL41N15D Datasheet Page 1
IRFSL41N15D Datasheet Page 2
IRFSL41N15D Datasheet Page 3
IRFSL41N15D Datasheet Page 4
IRFSL41N15D Datasheet Page 5
IRFSL41N15D Datasheet Page 6
IRFSL41N15D Datasheet Page 7
IRFSL41N15D Datasheet Page 8
IRFSL41N15D Datasheet Page 9
IRFSL41N15D Datasheet Page 10
IRFSL41N15D Datasheet Page 11
IRFSL41N15D Datasheet Page 12
IRFSL41N15D Datasheet Page 13

The Products You May Be Interested In

IRFSL41N15D IRFSL41N15D Infineon Technologies MOSFET N-CH 150V 41A TO-262 491

More on Order

IRFS41N15DTRR IRFS41N15DTRR Infineon Technologies MOSFET N-CH 150V 41A D2PAK 342

More on Order

IRFB41N15D IRFB41N15D Infineon Technologies MOSFET N-CH 150V 41A TO-220AB 340

More on Order

URL Link

IRFSL41N15D

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

41A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

45mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2520pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IRFS41N15DTRR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

41A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

45mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2520pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRFB41N15D

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

41A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

45mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2520pF @ 25V

FET Feature

-

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3