Contact Us
TELEPHONE86-755-85220304-805
E-MAILsales@oemstron.com
SKYPEAylin@oemstron.com
QQ2881674027
MessageLeave Your Message
Top

IRFR9120NTRR Datasheet

IRFR9120NTRR Cover
DatasheetIRFR9120NTRR
File Size122.84 KB
Total Pages11
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 3 part numbers
Associated Parts IRFR9120NTRR, IRFR9120NTRL, IRFU9120N
Description MOSFET P-CH 100V 6.6A DPAK, MOSFET P-CH 100V 6.6A DPAK, MOSFET P-CH 100V 6.6A I-PAK

IRFR9120NTRR - Infineon Technologies

IRFR9120NTRR Datasheet Page 1
IRFR9120NTRR Datasheet Page 2
IRFR9120NTRR Datasheet Page 3
IRFR9120NTRR Datasheet Page 4
IRFR9120NTRR Datasheet Page 5
IRFR9120NTRR Datasheet Page 6
IRFR9120NTRR Datasheet Page 7
IRFR9120NTRR Datasheet Page 8
IRFR9120NTRR Datasheet Page 9
IRFR9120NTRR Datasheet Page 10
IRFR9120NTRR Datasheet Page 11

The Products You May Be Interested In

IRFR9120NTRR IRFR9120NTRR Infineon Technologies MOSFET P-CH 100V 6.6A DPAK 435

More on Order

IRFR9120NTRL IRFR9120NTRL Infineon Technologies MOSFET P-CH 100V 6.6A DPAK 336

More on Order

IRFU9120N IRFU9120N Infineon Technologies MOSFET P-CH 100V 6.6A I-PAK 329

More on Order

URL Link

IRFR9120NTRR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

6.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

480mOhm @ 3.9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR9120NTRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

6.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

480mOhm @ 3.9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRFU9120N

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

6.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

480mOhm @ 3.9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA