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| Datasheet | IRF7739L2TR1PBF |
| File Size | 306.05 KB |
| Total Pages | 11 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IRF7739L2TR1PBF, IRF7739L2TRPBF |
| Description | MOSFET N-CH 40V 375A DIRECTFET, MOSFET N-CH 40V DIRECTFET L8 |
IRF7739L2TR1PBF - Infineon Technologies
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 46A (Ta), 375A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1mOhm @ 160A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11880pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 125W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DIRECTFET L8 Package / Case DirectFET™ Isometric L8 |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 46A (Ta), 375A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1mOhm @ 160A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11880pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 125W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DIRECTFET L8 Package / Case DirectFET™ Isometric L8 |