Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IRF7421D1PBF |
| File Size | 206.6 KB |
| Total Pages | 8 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IRF7421D1PBF, IRF7421D1TRPBF |
| Description | MOSFET N-CH 30V 5.8A 8-SOIC, MOSFET N-CH 30V 5.8A 8-SOIC |
IRF7421D1PBF - Infineon Technologies
The Products You May Be Interested In
 |
IRF7421D1PBF | Infineon Technologies | MOSFET N-CH 30V 5.8A 8-SOIC | 288 More on Order |
 |
IRF7421D1TRPBF | Infineon Technologies | MOSFET N-CH 30V 5.8A 8-SOIC | 173 More on Order |
URL Link
|
Manufacturer Infineon Technologies Series FETKY™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 35mOhm @ 4.1A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Infineon Technologies Series FETKY™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 35mOhm @ 4.1A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |