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| Datasheet | IRF7379QTRPBF |
| File Size | 234.27 KB |
| Total Pages | 10 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IRF7379QTRPBF |
| Description | MOSFET N/P-CH 30V 8-SOIC |
IRF7379QTRPBF - Infineon Technologies
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URL Link
www.oemstron.com/datasheet/IRF7379QTRPBF
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Manufacturer Infineon Technologies Series HEXFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.8A, 4.3A Rds On (Max) @ Id, Vgs 45mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V Power - Max 2.5W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |