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IRF6794MTRPBF Datasheet

IRF6794MTRPBF Cover
DatasheetIRF6794MTRPBF
File Size316.36 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 2 part numbers
Associated Parts IRF6794MTRPBF, IRF6794MTR1PBF
Description MOSFET N-CH 25V DIRECTFET MX, MOSFET N-CH 25V 32A DIRECTFET-MX

IRF6794MTRPBF - Infineon Technologies

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URL Link

IRF6794MTRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

32A (Ta), 200A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.7mOhm @ 32A, 10V

Vgs(th) (Max) @ Id

2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

47nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4420pF @ 13V

FET Feature

Schottky Diode (Body)

Power Dissipation (Max)

2.8W (Ta), 100W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MX

Package / Case

DirectFET™ Isometric MX

IRF6794MTR1PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

32A (Ta), 200A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.7mOhm @ 32A, 10V

Vgs(th) (Max) @ Id

2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

47nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4420pF @ 13V

FET Feature

Schottky Diode (Body)

Power Dissipation (Max)

2.8W (Ta), 100W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MX

Package / Case

DirectFET™ Isometric MX