Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IRF6720S2TRPBF |
| File Size | 273.85 KB |
| Total Pages | 10 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IRF6720S2TRPBF, IRF6720S2TR1PBF |
| Description | MOSFET N-CH 30V 11A DIRECTFET-S1, MOSFET N-CH 30V 11A DIRECTFET |
IRF6720S2TRPBF - Infineon Technologies
The Products You May Be Interested In
 |
IRF6720S2TRPBF | Infineon Technologies | MOSFET N-CH 30V 11A DIRECTFET-S1 | 305 More on Order |
 |
IRF6720S2TR1PBF | Infineon Technologies | MOSFET N-CH 30V 11A DIRECTFET | 372 More on Order |
URL Link
|
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8mOhm @ 11A, 10V Vgs(th) (Max) @ Id 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1140pF @ 15V FET Feature - Power Dissipation (Max) 1.7W (Ta), 17W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DIRECTFET S1 Package / Case DirectFET™ Isometric S1 |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8mOhm @ 11A, 10V Vgs(th) (Max) @ Id 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1140pF @ 15V FET Feature - Power Dissipation (Max) 1.7W (Ta), 17W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DIRECTFET S1 Package / Case DirectFET™ Isometric S1 |