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| Datasheet | IRF6629TRPBF |
| File Size | 227.85 KB |
| Total Pages | 9 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IRF6629TRPBF, IRF6629TR1PBF |
| Description | MOSFET N-CH 25V 29A DIRECTFET, MOSFET N-CH 25V 29A DIRECTFET |
IRF6629TRPBF - Infineon Technologies
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 29A (Ta), 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.1mOhm @ 29A, 10V Vgs(th) (Max) @ Id 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs 51nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4260pF @ 13V FET Feature - Power Dissipation (Max) 2.8W (Ta), 100W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DIRECTFET™ MX Package / Case DirectFET™ Isometric MX |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 29A (Ta), 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.1mOhm @ 29A, 10V Vgs(th) (Max) @ Id 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs 51nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4260pF @ 13V FET Feature - Power Dissipation (Max) 2.8W (Ta), 100W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DIRECTFET™ MX Package / Case DirectFET™ Isometric MX |