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| Datasheet | IRF6602 |
| File Size | 249.75 KB |
| Total Pages | 13 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IRF6602 |
| Description | MOSFET N-CH 20V 11A DIRECTFET |
IRF6602 - Infineon Technologies
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IRF6602 | Infineon Technologies | MOSFET N-CH 20V 11A DIRECTFET | 315 More on Order |
URL Link
www.oemstron.com/datasheet/IRF6602
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 11A (Ta), 48A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 13mOhm @ 11A, 10V Vgs(th) (Max) @ Id 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1420pF @ 10V FET Feature - Power Dissipation (Max) 2.3W (Ta), 42W (Tc) Operating Temperature - Mounting Type Surface Mount Supplier Device Package DIRECTFET™ MQ Package / Case DirectFET™ Isometric MQ |