Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IRF640PBF |
| File Size | 283.37 KB |
| Total Pages | 8 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IRF640PBF |
| Description | MOSFET N-CH 200V 18A TO-220AB |
IRF640PBF - Vishay Siliconix
The Products You May Be Interested In
 |
IRF640PBF | Vishay Siliconix | MOSFET N-CH 200V 18A TO-220AB | 4238 More on Order |
URL Link
www.oemstron.com/datasheet/IRF640PBF
|
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |