Contact Us
TELEPHONE86-755-85220304-805
E-MAILsales@oemstron.com
SKYPEAylin@oemstron.com
QQ2881674027
MessageLeave Your Message
Top

IRF2804STRR7PP Datasheet

IRF2804STRR7PP Cover
DatasheetIRF2804STRR7PP
File Size263.09 KB
Total Pages10
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 3 part numbers
Associated Parts IRF2804STRR7PP, IRF2804STRL-7P, IRF2804STRL7PP
Description MOSFET N-CH 40V 160A D2PAK-7, MOSFET N-CH 40V 160A D2PAK7, MOSFET N-CH 40V 160A D2PAK-7

IRF2804STRR7PP - Infineon Technologies

IRF2804STRR7PP Datasheet Page 1
IRF2804STRR7PP Datasheet Page 2
IRF2804STRR7PP Datasheet Page 3
IRF2804STRR7PP Datasheet Page 4
IRF2804STRR7PP Datasheet Page 5
IRF2804STRR7PP Datasheet Page 6
IRF2804STRR7PP Datasheet Page 7
IRF2804STRR7PP Datasheet Page 8
IRF2804STRR7PP Datasheet Page 9
IRF2804STRR7PP Datasheet Page 10

The Products You May Be Interested In

IRF2804STRR7PP IRF2804STRR7PP Infineon Technologies MOSFET N-CH 40V 160A D2PAK-7 412

More on Order

IRF2804STRL-7P IRF2804STRL-7P Infineon Technologies MOSFET N-CH 40V 160A D2PAK7 112

More on Order

IRF2804STRL7PP IRF2804STRL7PP Infineon Technologies MOSFET N-CH 40V 160A D2PAK-7 160

More on Order

URL Link

IRF2804STRR7PP

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

160A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.6mOhm @ 160A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6930pF @ 25V

FET Feature

-

Power Dissipation (Max)

330W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK (7-Lead)

Package / Case

TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

IRF2804STRL-7P

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

160A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.6mOhm @ 160A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6930pF @ 25V

FET Feature

-

Power Dissipation (Max)

330W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK (7-Lead)

Package / Case

TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

IRF2804STRL7PP

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

160A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.6mOhm @ 160A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6930pF @ 25V

FET Feature

-

Power Dissipation (Max)

330W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK (7-Lead)

Package / Case

TO-263-7, D²Pak (6 Leads + Tab), TO-263CB