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IRD3CH11DB6 Datasheet

IRD3CH11DB6 Cover
DatasheetIRD3CH11DB6
File Size132.1 KB
Total Pages1
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IRD3CH11DB6
Description DIODE GEN PURP 1.2KV 25A DIE

IRD3CH11DB6 - Infineon Technologies

IRD3CH11DB6 Datasheet Page 1

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IRD3CH11DB6 IRD3CH11DB6 Infineon Technologies DIODE GEN PURP 1.2KV 25A DIE 253

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URL Link

IRD3CH11DB6

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io)

25A

Voltage - Forward (Vf) (Max) @ If

2.7V @ 25A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

190ns

Current - Reverse Leakage @ Vr

700nA @ 1200V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die

Operating Temperature - Junction

-40°C ~ 150°C