Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

IRC634PBF Datasheet

IRC634PBF Cover
DatasheetIRC634PBF
File Size228.29 KB
Total Pages8
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IRC634PBF
Description MOSFET N-CH 250V 8.1A TO-220-5

IRC634PBF - Vishay Siliconix

IRC634PBF Datasheet Page 1
IRC634PBF Datasheet Page 2
IRC634PBF Datasheet Page 3
IRC634PBF Datasheet Page 4
IRC634PBF Datasheet Page 5
IRC634PBF Datasheet Page 6
IRC634PBF Datasheet Page 7
IRC634PBF Datasheet Page 8

The Products You May Be Interested In

IRC634PBF IRC634PBF Vishay Siliconix MOSFET N-CH 250V 8.1A TO-220-5 397

More on Order

URL Link

IRC634PBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

8.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

450mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

41nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

770pF @ 25V

FET Feature

Current Sensing

Power Dissipation (Max)

74W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-5

Package / Case

TO-220-5