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IPW50R280CEFKSA1 Datasheet

IPW50R280CEFKSA1 Cover
DatasheetIPW50R280CEFKSA1
File Size2,146.5 KB
Total Pages14
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 2 part numbers
Associated Parts IPW50R280CEFKSA1, IPP50R280CEXKSA1
Description MOSFET N-CH 500V 13A PG-TO247, MOSFET N-CH 500V 13A PG-TO220

IPW50R280CEFKSA1 - Infineon Technologies

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IPW50R280CEFKSA1 IPW50R280CEFKSA1 Infineon Technologies MOSFET N-CH 500V 13A PG-TO247 180

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IPP50R280CEXKSA1 IPP50R280CEXKSA1 Infineon Technologies MOSFET N-CH 500V 13A PG-TO220 1876

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URL Link

IPW50R280CEFKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

13V

Rds On (Max) @ Id, Vgs

280mOhm @ 4.2A, 13V

Vgs(th) (Max) @ Id

3.5V @ 350µA

Gate Charge (Qg) (Max) @ Vgs

32.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

773pF @ 100V

FET Feature

Super Junction

Power Dissipation (Max)

92W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-3

Package / Case

TO-247-3

IPP50R280CEXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

13V

Rds On (Max) @ Id, Vgs

280mOhm @ 4.2A, 13V

Vgs(th) (Max) @ Id

3.5V @ 350µA

Gate Charge (Qg) (Max) @ Vgs

32.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

773pF @ 100V

FET Feature

Super Junction

Power Dissipation (Max)

92W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3