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IPU80R3K3P7AKMA1 Datasheet

IPU80R3K3P7AKMA1 Cover
DatasheetIPU80R3K3P7AKMA1
File Size1,225.06 KB
Total Pages13
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IPU80R3K3P7AKMA1
Description MOSFET N-CH 800V 1.9A TO251-3

IPU80R3K3P7AKMA1 - Infineon Technologies

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IPU80R3K3P7AKMA1 IPU80R3K3P7AKMA1 Infineon Technologies MOSFET N-CH 800V 1.9A TO251-3 2053

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URL Link

IPU80R3K3P7AKMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

1.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.3Ohm @ 590mA, 10V

Vgs(th) (Max) @ Id

3.5V @ 30µA

Gate Charge (Qg) (Max) @ Vgs

5.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

120pF @ 500V

FET Feature

-

Power Dissipation (Max)

18W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA