Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IPU135N08N3 G |
| File Size | 597.82 KB |
| Total Pages | 9 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IPU135N08N3 G |
| Description | MOSFET N-CH 80V 50A TO251-3 |
IPU135N08N3 G - Infineon Technologies
The Products You May Be Interested In
 |
IPU135N08N3 G | Infineon Technologies | MOSFET N-CH 80V 50A TO251-3 | 188 More on Order |
URL Link
www.oemstron.com/datasheet/IPU135N08N3 G
|
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 13.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id 3.5V @ 33µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1730pF @ 40V FET Feature - Power Dissipation (Max) 79W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO251-3 Package / Case TO-251-3 Short Leads, IPak, TO-251AA |