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IPS040N03LGAKMA1 Datasheet

IPS040N03LGAKMA1 Cover
DatasheetIPS040N03LGAKMA1
File Size915.22 KB
Total Pages10
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IPS040N03LGAKMA1
Description MOSFET N-CH 30V 90A TO251-3

IPS040N03LGAKMA1 - Infineon Technologies

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URL Link

IPS040N03LGAKMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

3900pF @ 15V

FET Feature

-

Power Dissipation (Max)

79W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Stub Leads, IPak