Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

IPP80N06S3L-08 Datasheet

IPP80N06S3L-08 Cover
DatasheetIPP80N06S3L-08
File Size185.31 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 2 part numbers
Associated Parts IPP80N06S3L-08, IPI80N06S3L-08
Description MOSFET N-CH 55V 80A TO-220, MOSFET N-CH 55V 80A TO-262

IPP80N06S3L-08 - Infineon Technologies

IPP80N06S3L-08 Datasheet Page 1
IPP80N06S3L-08 Datasheet Page 2
IPP80N06S3L-08 Datasheet Page 3
IPP80N06S3L-08 Datasheet Page 4
IPP80N06S3L-08 Datasheet Page 5
IPP80N06S3L-08 Datasheet Page 6
IPP80N06S3L-08 Datasheet Page 7
IPP80N06S3L-08 Datasheet Page 8
IPP80N06S3L-08 Datasheet Page 9

The Products You May Be Interested In

IPP80N06S3L-08 IPP80N06S3L-08 Infineon Technologies MOSFET N-CH 55V 80A TO-220 207

More on Order

IPI80N06S3L-08 IPI80N06S3L-08 Infineon Technologies MOSFET N-CH 55V 80A TO-262 254

More on Order

URL Link

IPP80N06S3L-08

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

7.9mOhm @ 43A, 10V

Vgs(th) (Max) @ Id

2.2V @ 55µA

Gate Charge (Qg) (Max) @ Vgs

134nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

6475pF @ 25V

FET Feature

-

Power Dissipation (Max)

105W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

IPI80N06S3L-08

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

7.9mOhm @ 43A, 10V

Vgs(th) (Max) @ Id

2.2V @ 55µA

Gate Charge (Qg) (Max) @ Vgs

134nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

6475pF @ 25V

FET Feature

-

Power Dissipation (Max)

105W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA