Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

IPP80N04S2H4AKSA1 Datasheet

IPP80N04S2H4AKSA1 Cover
DatasheetIPP80N04S2H4AKSA1
File Size190.42 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 4 part numbers
Associated Parts IPP80N04S2H4AKSA1, IPI80N04S2H4AKSA1, IPB80N04S2H4ATMA1, IPB80N04S2H4ATMA2
Description MOSFET N-CH 40V 80A TO220-3, MOSFET N-CH 40V 80A TO262-3, MOSFET N-CH 40V 80A TO263-3, MOSFET N-CHANNEL_30/40V

IPP80N04S2H4AKSA1 - Infineon Technologies

IPP80N04S2H4AKSA1 Datasheet Page 1
IPP80N04S2H4AKSA1 Datasheet Page 2
IPP80N04S2H4AKSA1 Datasheet Page 3
IPP80N04S2H4AKSA1 Datasheet Page 4
IPP80N04S2H4AKSA1 Datasheet Page 5
IPP80N04S2H4AKSA1 Datasheet Page 6
IPP80N04S2H4AKSA1 Datasheet Page 7
IPP80N04S2H4AKSA1 Datasheet Page 8
IPP80N04S2H4AKSA1 Datasheet Page 9

The Products You May Be Interested In

IPP80N04S2H4AKSA1 IPP80N04S2H4AKSA1 Infineon Technologies MOSFET N-CH 40V 80A TO220-3 138

More on Order

IPI80N04S2H4AKSA1 IPI80N04S2H4AKSA1 Infineon Technologies MOSFET N-CH 40V 80A TO262-3 366

More on Order

IPB80N04S2H4ATMA1 IPB80N04S2H4ATMA1 Infineon Technologies MOSFET N-CH 40V 80A TO263-3 350

More on Order

IPB80N04S2H4ATMA2 IPB80N04S2H4ATMA2 Infineon Technologies MOSFET N-CHANNEL_30/40V 422

More on Order

URL Link

IPP80N04S2H4AKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

148nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4400pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

IPI80N04S2H4AKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

148nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4400pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IPB80N04S2H4ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

148nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4400pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB80N04S2H4ATMA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-