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IPP77N06S3-09 Datasheet

IPP77N06S3-09 Cover
DatasheetIPP77N06S3-09
File Size185.2 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 3 part numbers
Associated Parts IPP77N06S3-09, IPI77N06S3-09, IPB77N06S3-09
Description MOSFET N-CH 55V 77A TO-220, MOSFET N-CH 55V 77A TO-262, MOSFET N-CH 55V 77A D2PAK

IPP77N06S3-09 - Infineon Technologies

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IPP77N06S3-09 IPP77N06S3-09 Infineon Technologies MOSFET N-CH 55V 77A TO-220 324

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IPI77N06S3-09 IPI77N06S3-09 Infineon Technologies MOSFET N-CH 55V 77A TO-262 226

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IPB77N06S3-09 IPB77N06S3-09 Infineon Technologies MOSFET N-CH 55V 77A D2PAK 154

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URL Link

IPP77N06S3-09

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

77A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9.1mOhm @ 39A, 10V

Vgs(th) (Max) @ Id

4V @ 55µA

Gate Charge (Qg) (Max) @ Vgs

103nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5335pF @ 25V

FET Feature

-

Power Dissipation (Max)

107W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

IPI77N06S3-09

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

77A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9.1mOhm @ 39A, 10V

Vgs(th) (Max) @ Id

4V @ 55µA

Gate Charge (Qg) (Max) @ Vgs

103nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5335pF @ 25V

FET Feature

-

Power Dissipation (Max)

107W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IPB77N06S3-09

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

77A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8.8mOhm @ 39A, 10V

Vgs(th) (Max) @ Id

4V @ 55µA

Gate Charge (Qg) (Max) @ Vgs

103nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5335pF @ 25V

FET Feature

-

Power Dissipation (Max)

107W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB