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IPP22N03S4L15AKSA1 Datasheet

IPP22N03S4L15AKSA1 Cover
DatasheetIPP22N03S4L15AKSA1
File Size188.46 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 3 part numbers
Associated Parts IPP22N03S4L15AKSA1, IPI22N03S4L15AKSA1, IPB22N03S4L15ATMA1
Description MOSFET N-CH 30V 22A TO220-3, MOSFET N-CH 30V 22A TO262-3, MOSFET N-CH 30V 22A TO263-3

IPP22N03S4L15AKSA1 - Infineon Technologies

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IPP22N03S4L15AKSA1 IPP22N03S4L15AKSA1 Infineon Technologies MOSFET N-CH 30V 22A TO220-3 481

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IPI22N03S4L15AKSA1 IPI22N03S4L15AKSA1 Infineon Technologies MOSFET N-CH 30V 22A TO262-3 471

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IPB22N03S4L15ATMA1 IPB22N03S4L15ATMA1 Infineon Technologies MOSFET N-CH 30V 22A TO263-3 337

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URL Link

IPP22N03S4L15AKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

14.9mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

2.2V @ 10µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

980pF @ 25V

FET Feature

-

Power Dissipation (Max)

31W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

IPI22N03S4L15AKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

14.9mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

2.2V @ 10µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

980pF @ 25V

FET Feature

-

Power Dissipation (Max)

31W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IPB22N03S4L15ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

14.6mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

2.2V @ 10µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

980pF @ 25V

FET Feature

-

Power Dissipation (Max)

31W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB