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IPP100N06S3L-03 Datasheet

IPP100N06S3L-03 Cover
DatasheetIPP100N06S3L-03
File Size192.19 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 3 part numbers
Associated Parts IPP100N06S3L-03, IPI100N06S3L-03, IPB100N06S3L-03
Description MOSFET N-CH 55V 100A TO-220, MOSFET N-CH 55V 100A TO-262, MOSFET N-CH 55V 100A TO263-3-2

IPP100N06S3L-03 - Infineon Technologies

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IPP100N06S3L-03 IPP100N06S3L-03 Infineon Technologies MOSFET N-CH 55V 100A TO-220 410

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IPI100N06S3L-03 IPI100N06S3L-03 Infineon Technologies MOSFET N-CH 55V 100A TO-262 328

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IPB100N06S3L-03 IPB100N06S3L-03 Infineon Technologies MOSFET N-CH 55V 100A TO263-3-2 155

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URL Link

IPP100N06S3L-03

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

3mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2.2V @ 230µA

Gate Charge (Qg) (Max) @ Vgs

550nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

26240pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

IPI100N06S3L-03

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

3mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2.2V @ 230µA

Gate Charge (Qg) (Max) @ Vgs

550nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

26240pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IPB100N06S3L-03

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

2.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2.2V @ 230µA

Gate Charge (Qg) (Max) @ Vgs

550nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

26240pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB