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IPI70N10S3L12AKSA1 Datasheet

IPI70N10S3L12AKSA1 Cover
DatasheetIPI70N10S3L12AKSA1
File Size160.73 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IPI70N10S3L12AKSA1
Description MOSFET N-CH 100V 70A TO262-3

IPI70N10S3L12AKSA1 - Infineon Technologies

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URL Link

IPI70N10S3L12AKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12.1mOhm @ 70A, 10V

Vgs(th) (Max) @ Id

2.4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5550pF @ 25V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA