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IPD60R2K0C6BTMA1 Datasheet

IPD60R2K0C6BTMA1 Cover
DatasheetIPD60R2K0C6BTMA1
File Size938.66 KB
Total Pages14
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IPD60R2K0C6BTMA1
Description MOSFET N-CH 600V 2.4A TO252-3

IPD60R2K0C6BTMA1 - Infineon Technologies

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IPD60R2K0C6BTMA1 IPD60R2K0C6BTMA1 Infineon Technologies MOSFET N-CH 600V 2.4A TO252-3 282

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URL Link

IPD60R2K0C6BTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

2.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 760mA, 10V

Vgs(th) (Max) @ Id

3.5V @ 60µA

Gate Charge (Qg) (Max) @ Vgs

6.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

140pF @ 100V

FET Feature

-

Power Dissipation (Max)

22.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63