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IPD60R180P7ATMA1 Datasheet

IPD60R180P7ATMA1 Cover
DatasheetIPD60R180P7ATMA1
File Size1,102.69 KB
Total Pages14
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IPD60R180P7ATMA1
Description MOSFET N-CH 650V 18A TO252-3

IPD60R180P7ATMA1 - Infineon Technologies

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URL Link

IPD60R180P7ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

180mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id

4V @ 280µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1081pF @ 400V

FET Feature

-

Power Dissipation (Max)

72W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63