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IPD50R1K4CEBTMA1 Datasheet

IPD50R1K4CEBTMA1 Cover
DatasheetIPD50R1K4CEBTMA1
File Size1,624.95 KB
Total Pages14
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IPD50R1K4CEBTMA1
Description MOSFET N-CH 500V 3.1A PG-TO-252

IPD50R1K4CEBTMA1 - Infineon Technologies

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IPD50R1K4CEBTMA1 IPD50R1K4CEBTMA1 Infineon Technologies MOSFET N-CH 500V 3.1A PG-TO-252 396

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URL Link

IPD50R1K4CEBTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ CE

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

13V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 900mA, 13V

Vgs(th) (Max) @ Id

3.5V @ 70µA

Gate Charge (Qg) (Max) @ Vgs

1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

178pF @ 100V

FET Feature

-

Power Dissipation (Max)

25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63