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| Datasheet | IPD06N03LB G |
| File Size | 295.77 KB |
| Total Pages | 9 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IPD06N03LB G |
| Description | MOSFET N-CH 30V 50A TO-252 |
IPD06N03LB G - Infineon Technologies
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URL Link
www.oemstron.com/datasheet/IPD06N03LB G
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.1mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 40µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 15V FET Feature - Power Dissipation (Max) 83W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |