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IPB65R600C6ATMA1 Datasheet

IPB65R600C6ATMA1 Cover
DatasheetIPB65R600C6ATMA1
File Size2,092.73 KB
Total Pages19
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 2 part numbers
Associated Parts IPB65R600C6ATMA1, IPA65R600C6XKSA1
Description MOSFET N-CH 650V 7.3A TO263, MOSFET N-CH 650V 7.3A TO220

IPB65R600C6ATMA1 - Infineon Technologies

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IPB65R600C6ATMA1 IPB65R600C6ATMA1 Infineon Technologies MOSFET N-CH 650V 7.3A TO263 261

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IPA65R600C6XKSA1 IPA65R600C6XKSA1 Infineon Technologies MOSFET N-CH 650V 7.3A TO220 257

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URL Link

IPB65R600C6ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

7.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 2.1A, 10V

Vgs(th) (Max) @ Id

3.5V @ 210µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

440pF @ 100V

FET Feature

-

Power Dissipation (Max)

63W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPA65R600C6XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

7.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 2.1A, 10V

Vgs(th) (Max) @ Id

3.5V @ 210µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

440pF @ 100V

FET Feature

-

Power Dissipation (Max)

28W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220 Full Pack

Package / Case

TO-220-3 Full Pack