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IPB260N06N3GATMA1 Datasheet

IPB260N06N3GATMA1 Cover
DatasheetIPB260N06N3GATMA1
File Size690.02 KB
Total Pages10
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 2 part numbers
Associated Parts IPB260N06N3GATMA1, IPP260N06N3GXKSA1
Description MOSFET N-CH 60V 27A TO263-3, MOSFET N-CH 60V 27A TO220-3

IPB260N06N3GATMA1 - Infineon Technologies

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IPB260N06N3GATMA1 IPB260N06N3GATMA1 Infineon Technologies MOSFET N-CH 60V 27A TO263-3 311

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IPP260N06N3GXKSA1 IPP260N06N3GXKSA1 Infineon Technologies MOSFET N-CH 60V 27A TO220-3 173

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URL Link

IPB260N06N3GATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

27A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

25.7mOhm @ 27A, 10V

Vgs(th) (Max) @ Id

4V @ 11µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 30V

FET Feature

-

Power Dissipation (Max)

36W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPP260N06N3GXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

27A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

26mOhm @ 27A, 10V

Vgs(th) (Max) @ Id

4V @ 11µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 30V

FET Feature

-

Power Dissipation (Max)

36W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3