Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IPB120N06N G |
| File Size | 737.46 KB |
| Total Pages | 10 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IPB120N06N G, IPP120N06NGAKSA1 |
| Description | MOSFET N-CH 60V 75A TO-263, MOSFET N-CH 60V 75A TO-220 |
IPB120N06N G - Infineon Technologies
The Products You May Be Interested In
 |
IPB120N06N G | Infineon Technologies | MOSFET N-CH 60V 75A TO-263 | 500 More on Order |
 |
IPP120N06NGAKSA1 | Infineon Technologies | MOSFET N-CH 60V 75A TO-220 | 488 More on Order |
URL Link
|
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11.7mOhm @ 75A, 10V Vgs(th) (Max) @ Id 4V @ 94µA Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 30V FET Feature - Power Dissipation (Max) 158W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 12mOhm @ 75A, 10V Vgs(th) (Max) @ Id 4V @ 94µA Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 30V FET Feature - Power Dissipation (Max) 158W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |