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IDC08S60CEX7SA1 Datasheet

IDC08S60CEX7SA1 Cover
DatasheetIDC08S60CEX7SA1
File Size57.54 KB
Total Pages5
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 3 part numbers
Associated Parts IDC08S60CEX7SA1, IDC08S60CEX1SA3, IDC08S60CEX1SA2
Description DIODE GEN PURPOSE SAWN WAFER, DIODE SIC 600V 8A SAWN WAFER, DIODE SIC 600V 8A SAWN WAFER

IDC08S60CEX7SA1 - Infineon Technologies

IDC08S60CEX7SA1 Datasheet Page 1
IDC08S60CEX7SA1 Datasheet Page 2
IDC08S60CEX7SA1 Datasheet Page 3
IDC08S60CEX7SA1 Datasheet Page 4
IDC08S60CEX7SA1 Datasheet Page 5

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IDC08S60CEX7SA1 IDC08S60CEX7SA1 Infineon Technologies DIODE GEN PURPOSE SAWN WAFER 249

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IDC08S60CEX1SA3 IDC08S60CEX1SA3 Infineon Technologies DIODE SIC 600V 8A SAWN WAFER 263

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IDC08S60CEX1SA2 IDC08S60CEX1SA2 Infineon Technologies DIODE SIC 600V 8A SAWN WAFER 365

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URL Link

IDC08S60CEX7SA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

Diode Type

-

Voltage - DC Reverse (Vr) (Max)

-

Current - Average Rectified (Io)

-

Voltage - Forward (Vf) (Max) @ If

-

Speed

-

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

-

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Sawn on foil

Operating Temperature - Junction

-

IDC08S60CEX1SA3

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolSiC™+

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

8A (DC)

Voltage - Forward (Vf) (Max) @ If

1.7V @ 8A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

100µA @ 600V

Capacitance @ Vr, F

310pF @ 1V, 1MHz

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die

Operating Temperature - Junction

-55°C ~ 175°C

IDC08S60CEX1SA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolSiC™+

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

8A (DC)

Voltage - Forward (Vf) (Max) @ If

1.7V @ 8A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

100µA @ 600V

Capacitance @ Vr, F

310pF @ 1V, 1MHz

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die

Operating Temperature - Junction

-55°C ~ 175°C