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| Datasheet | IDC05S60CEX1SA1 |
| File Size | 58.78 KB |
| Total Pages | 5 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IDC05S60CEX1SA1 |
| Description | DIODE SIC 600V 5A SAWN WAFER |
IDC05S60CEX1SA1 - Infineon Technologies
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URL Link
www.oemstron.com/datasheet/IDC05S60CEX1SA1
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Manufacturer Infineon Technologies Series CoolSiC™+ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 5A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 5A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 70µA @ 600V Capacitance @ Vr, F 240pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case Die Supplier Device Package Die Operating Temperature - Junction -55°C ~ 175°C |