Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

HUFA76429D3ST Datasheet

HUFA76429D3ST Cover
DatasheetHUFA76429D3ST
File Size294.25 KB
Total Pages10
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts HUFA76429D3ST, HUFA76429D3S
Description MOSFET N-CH 60V 20A DPAK, MOSFET N-CH 60V 20A DPAK

HUFA76429D3ST - ON Semiconductor

HUFA76429D3ST Datasheet Page 1
HUFA76429D3ST Datasheet Page 2
HUFA76429D3ST Datasheet Page 3
HUFA76429D3ST Datasheet Page 4
HUFA76429D3ST Datasheet Page 5
HUFA76429D3ST Datasheet Page 6
HUFA76429D3ST Datasheet Page 7
HUFA76429D3ST Datasheet Page 8
HUFA76429D3ST Datasheet Page 9
HUFA76429D3ST Datasheet Page 10

The Products You May Be Interested In

HUFA76429D3ST HUFA76429D3ST ON Semiconductor MOSFET N-CH 60V 20A DPAK 116

More on Order

HUFA76429D3S HUFA76429D3S ON Semiconductor MOSFET N-CH 60V 20A DPAK 217

More on Order

URL Link

HUFA76429D3ST

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

23mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1480pF @ 25V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252AA

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

HUFA76429D3S

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

23mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1480pF @ 25V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252AA

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63