Semiconductors
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Optoelectronics
| Datasheet | HGTP7N60A4-F102 |
| File Size | 242.48 KB |
| Total Pages | 8 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | HGTP7N60A4-F102, HGTP7N60A4 |
| Description | N-CH / 7A 600V SMPS 1 IGBT, IGBT 600V 34A 125W TO220AB |
HGTP7N60A4-F102 - ON Semiconductor
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Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 34A Current - Collector Pulsed (Icm) 56A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 7A Power - Max 125W Switching Energy 55µJ (on), 150µJ (off) Input Type Standard Gate Charge 60nC Td (on/off) @ 25°C 11ns/100ns Test Condition 390V, 7A, 25Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 34A Current - Collector Pulsed (Icm) 56A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 7A Power - Max 125W Switching Energy 55µJ (on), 60µJ (off) Input Type Standard Gate Charge 37nC Td (on/off) @ 25°C 11ns/100ns Test Condition 390V, 7A, 25Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |