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| Datasheet | HGT1S7N60A4DS |
| File Size | 193.73 KB |
| Total Pages | 9 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | HGT1S7N60A4DS |
| Description | IGBT 600V 34A 125W TO263AB |
HGT1S7N60A4DS - ON Semiconductor
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HGT1S7N60A4DS | ON Semiconductor | IGBT 600V 34A 125W TO263AB | 194 More on Order |
URL Link
www.oemstron.com/datasheet/HGT1S7N60A4DS
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Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 34A Current - Collector Pulsed (Icm) 56A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 7A Power - Max 125W Switching Energy 55µJ (on), 60µJ (off) Input Type Standard Gate Charge 37nC Td (on/off) @ 25°C 11ns/100ns Test Condition 390V, 7A, 25Ohm, 15V Reverse Recovery Time (trr) 34ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB |