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| Datasheet | HGT1S3N60A4DS9A |
| File Size | 113.52 KB |
| Total Pages | 9 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | HGT1S3N60A4DS9A |
| Description | IGBT 600V 17A 70W D2PAK |
HGT1S3N60A4DS9A - ON Semiconductor
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URL Link
www.oemstron.com/datasheet/HGT1S3N60A4DS9A
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Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 17A Current - Collector Pulsed (Icm) 40A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 3A Power - Max 70W Switching Energy 37µJ (on), 25µJ (off) Input Type Standard Gate Charge 21nC Td (on/off) @ 25°C 6ns/73ns Test Condition 390V, 3A, 50Ohm, 15V Reverse Recovery Time (trr) 29ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB |