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| Datasheet | HGT1S2N120CN |
| File Size | 498.55 KB |
| Total Pages | 9 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | HGT1S2N120CN |
| Description | IGBT 1200V 13A 104W I2PAK |
HGT1S2N120CN - ON Semiconductor
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HGT1S2N120CN | ON Semiconductor | IGBT 1200V 13A 104W I2PAK | 367 More on Order |
URL Link
www.oemstron.com/datasheet/HGT1S2N120CN
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Manufacturer ON Semiconductor Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 13A Current - Collector Pulsed (Icm) 20A Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 2.6A Power - Max 104W Switching Energy 96µJ (on), 355µJ (off) Input Type Standard Gate Charge 30nC Td (on/off) @ 25°C 25ns/205ns Test Condition 960V, 2.6A, 51Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package TO-262 |