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| Datasheet | HGT1S12N60A4DS |
| File Size | 580.48 KB |
| Total Pages | 12 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | HGT1S12N60A4DS, HGTP12N60A4D, HGTG12N60A4D |
| Description | IGBT 600V 54A 167W D2PAK, IGBT 600V 54A 167W TO220AB, IGBT 600V 54A 167W TO247 |
HGT1S12N60A4DS - ON Semiconductor
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Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 54A Current - Collector Pulsed (Icm) 96A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A Power - Max 167W Switching Energy 55µJ (on), 50µJ (off) Input Type Standard Gate Charge 78nC Td (on/off) @ 25°C 17ns/96ns Test Condition 390V, 12A, 10Ohm, 15V Reverse Recovery Time (trr) 30ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB |
Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 54A Current - Collector Pulsed (Icm) 96A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A Power - Max 167W Switching Energy 55µJ (on), 50µJ (off) Input Type Standard Gate Charge 78nC Td (on/off) @ 25°C 17ns/96ns Test Condition 390V, 12A, 10Ohm, 15V Reverse Recovery Time (trr) 30ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 54A Current - Collector Pulsed (Icm) 96A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A Power - Max 167W Switching Energy 55µJ (on), 50µJ (off) Input Type Standard Gate Charge 78nC Td (on/off) @ 25°C 17ns/96ns Test Condition 390V, 12A, 10Ohm, 15V Reverse Recovery Time (trr) 30ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 |