Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

GT10J312(Q) Datasheet

GT10J312(Q) Cover
DatasheetGT10J312(Q)
File Size509.49 KB
Total Pages7
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 1 part numbers
Associated Parts GT10J312(Q)
Description IGBT 600V 10A 60W TO220SM

GT10J312(Q) - Toshiba Semiconductor and Storage

GT10J312(Q) Datasheet Page 1
GT10J312(Q) Datasheet Page 2
GT10J312(Q) Datasheet Page 3
GT10J312(Q) Datasheet Page 4
GT10J312(Q) Datasheet Page 5
GT10J312(Q) Datasheet Page 6
GT10J312(Q) Datasheet Page 7

The Products You May Be Interested In

GT10J312(Q) GT10J312(Q) Toshiba Semiconductor and Storage IGBT 600V 10A 60W TO220SM 435

More on Order

URL Link

GT10J312(Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

10A

Current - Collector Pulsed (Icm)

20A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 10A

Power - Max

60W

Switching Energy

-

Input Type

Standard

Gate Charge

-

Td (on/off) @ 25°C

400ns/400ns

Test Condition

300V, 10A, 100Ohm, 15V

Reverse Recovery Time (trr)

200ns

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

TO-220SM